Liberty Times e-Newspaper, 2024/9/2
[Reporter Fang Wei-Jie / Taipei Report] Foxconn (2317) announced today that its research institute has once again achieved the latest breakthrough in the semiconductor field. It has successfully developed a “high-frequency, high-efficiency laser driver circuit” based on a “complementary gallium nitride transistor architecture”. By integrating “depletion-mode gallium nitride transistors” into the “pulse laser driver circuit”, it enables highly efficient power conversion. Foxconn is currently applying for related patents.
Foxconn stated that the “high-frequency short-pulse laser driver” developed by its research institute has a switching frequency of 50 MHz, a pulse width of less than 10 nanoseconds, and a peak driving power of 50W. After circuit analysis and optimization, the pulse laser driver’s conversion efficiency can reach 75%, whereas the theoretical maximum efficiency of traditional pulse laser architectures is only 37%.
Foxconn mentioned that this research achievement is the result of collaboration between Dr. Hong Yu-Heng from its Semiconductor Institute and the research team of the International Semiconductor Academy. The research achievement has been published in the IEEE Transactions on Power Electronics (TPEL), which is an academic journal published by the Power Electronics Society of the Institute of Electrical and Electronics Engineers (IEEE). The journal is one of the most influential and authoritative publications in the field of power electronics.
Foxconn believes that the achievement is facilitated to provide the market with miniaturized, high-efficiency power conversion modules, which can be used to develop compact, high-performance optical LiDAR. Foxconn hopes to continue developing third-class semiconductor technology, and by sharing with the industry and incorporating Taiwan’s semiconductor strengths, continuously improve the miniaturization and efficiency of advanced modules such as LiDAR, paving the way for future technological innovations.
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